WFF5N60 - HIGH VOLTAGE N-Channel MOSFET

Wisdom technologies

Key Features

Low Intrinsic Capacitances .
Excellent Switching Characteristics .
Extended Safe Operating Area .
Unrivalled Gate Charge : 15 nC (Typ. ).
BVDSS=600V,ID=4.5A.
Lower RDS(on) : 2.5Ω (Max) @VG=10V.
100% Avalanche Tested GD S D G S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (T.

WFF5N60 high voltage n-channel mosfet by Wisdom technologies - Datasheet Preview

Datasheet Details

Part number	WFF5N60
Manufacturer	Wisdom technologies
File Size	1.39 MB
Description	HIGH VOLTAGE N-Channel MOSFET
Datasheet	WFF5N60 Datasheet

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HIGH VOLTAGE N-Channel MOSFET WFF5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4.5A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested GD S D G S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy (Note1) Avalanche Current (Note2) Power Dissipation (Tc=25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds WFF5N60 600 4.