| Part Number | WFF5N60 Datasheet |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Overview |
This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanch.
* 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V * Ultra-low Gate Charge(Typical 16nC) * Fast Switching Capability * 100%Avalanche Tested * Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology. This latest technolog. |
WFF5N60 Datasheet and Specifications PDF
The WFF5N60 is a Silicon N-Channel MOSFET.
| Part Number | WFF5N60 Datasheet |
|---|---|
| Description | HIGH VOLTAGE N-Channel MOSFET |
| Manufacturer | Wisdom technologies |
| Overview |
HIGH VOLTAGE N-Channel MOSFET
WFF5N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge.
* Low Intrinsic Capacitances * Excellent Switching Characteristics * Extended Safe Operating Area * Unrivalled Gate Charge : 15 nC (Typ.) * BVDSS=600V,ID=4.5A * Lower RDS(on) : 2.5Ω (Max) @VG=10V * 100% Avalanche Tested GD S D G S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum . |