WFF5N60
Overview
This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
- 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 16nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
