WFF5N60 Description
This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast.
WFF5N60 Key Features
- 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 16nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)