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WFF5N60 Datasheet Silicon N-channel MOSFET

Manufacturer: WINSEMI SEMICONDUCTOR

Overview: .DataSheet.in WFF5N60 Silicon N-Channel MOSFET.

General Description

This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast.

Key Features

  • 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 16nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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