WFF5N60 Datasheet | WINSEMI SEMICONDUCTOR

.DataSheet.in Silicon N-Channel MOSFET Features - 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V - Ultra-low Gate Charge(Typical 16nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp...