Datasheet4U Logo Datasheet4U.com

WSD90P06DN56 - P-Channel MOSFET

Description

The WSD90P06DN56 is the highest performance trench P-Channel MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • 100% EAS Guaranteed.
  • Green Device Available WSD90P06DN56 P-Channel MOSFET Product Summery BVDSS -60V RDS(ON) 10mΩ ID -90A.

📥 Download Datasheet

Datasheet Details

Part number WSD90P06DN56
Manufacturer Winsok
File Size 740.63 KB
Description P-Channel MOSFET
Datasheet download datasheet WSD90P06DN56 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WSD1030CT D-PAK Surface Mount Schottky Barrier Rectifiers Weitron Technology
WSD1035CT D-PAK Surface Mount Schottky Barrier Rectifiers Weitron Technology
WSD1040CT D-PAK Surface Mount Schottky Barrier Rectifiers Weitron Technology
WSD1045CT D-PAK Surface Mount Schottky Barrier Rectifiers Weitron Technology
WSD109H Surface Mount Schottky Barrier Diodes Weitron Technology

Other Datasheets by Winsok

Part Number Description
WSD1006GDN22 N-Channel MOSFET
WSD100N06GDN56 N-Channel MOSFET
WSD2010DN25 Dual N-Channel MOSFET
WSD2012DN25 Dual N-Channel MOSFET
WSD2068DN23 Dual N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
General Description The WSD90P06DN56 is the highest performance trench P-Channel MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD90P06DN56 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Published: |