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CAS480M12HM3 - Half-Bridge Module

Features

  • Low Inductance, Low Profile 62mm Footprint.
  • High Junction Temperature (175 °C) Operation.
  • Implements Switching Optimized Third Generation SiC MOSFET Technology.
  • Zero Reverse Recovery from Diodes.
  • Light Weight AlSiC Baseplate.
  • High Reliability Silicon Nitride Insulator D V+ G1 K1 Mid NTC1 G2 K2 -t° C NTC2 V- Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAS480M12HM3 1200 V, 480 A, Silicon Carbide, Half-Bridge Module VDS 1200 V IDS 480 A 5 4 3 2 1 Technical Features • Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Zero Reverse Recovery from Diodes • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator D V+ G1 K1 Mid NTC1 G2 K2 -t° C NTC2 V- Typical Applications • Railway, Traction, and Motor Drives • EV Chargers • High-Efficiency Converters/Inverters • Renewable Energy • Smart-Grid/Grid-Tied Distributed Generation 1 System Benefits • • EInncarbealesseCdoBSmyspteamct,ELfifgichitewneciyg,hdtuSeytsoteLm45ows Switching &2 Conduction Losses of SiC • Reduced Thermal Requirements an
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