Datasheet Details
| Part number | VSMT056P03VA1 |
|---|---|
| Manufacturer | Xirun |
| File Size | 2.30 MB |
| Description | -30V P-Channel Enhancement Mode MOSFET |
| Datasheet | VSMT056P03VA1-Xirun.pdf |
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Overview: VSMT056P03VA1 -30V P-Channel Enhancement Mode MOSFET General.
| Part number | VSMT056P03VA1 |
|---|---|
| Manufacturer | Xirun |
| File Size | 2.30 MB |
| Description | -30V P-Channel Enhancement Mode MOSFET |
| Datasheet | VSMT056P03VA1-Xirun.pdf |
|
|
|
The VSMT056P03VA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack VSMT056P03VA1 SOP-8L Marking VSM T056P03V XXX YYYY Qty(PCS) 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -30 ±20 -20 -16.8 -60 125 69 -55 to 150 -55 to 150 85 1.6 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W Technology Innovation Future Rev.202306 Page 1 VSMT056P03VA1 -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA Min.
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