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VSMT056P03VA1 - -30V P-Channel Enhancement Mode MOSFET

Description

The VSMT056P03VA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS - 30V ID - 20A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 5.6 mΩ 8.0 mΩ.

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Datasheet Details

Part number VSMT056P03VA1
Manufacturer Xirun
File Size 2.30 MB
Description -30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet VSMT056P03VA1 Datasheet

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Full PDF Text Transcription

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VSMT056P03VA1 -30V P-Channel Enhancement Mode MOSFET General Features VDS - 30V ID - 20A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 5.6 mΩ 8.0 mΩ Description The VSMT056P03VA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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