Datasheet Details
| Part number | VSMT110P03DA1 |
|---|---|
| Manufacturer | Xirun |
| File Size | 2.08 MB |
| Description | -30V P-Channel Enhancement Mode MOSFET |
| Datasheet | VSMT110P03DA1-Xirun.pdf |
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Overview: VSMT110P03DA1 -30V P-Channel Enhancement Mode MOSFET General.
| Part number | VSMT110P03DA1 |
|---|---|
| Manufacturer | Xirun |
| File Size | 2.08 MB |
| Description | -30V P-Channel Enhancement Mode MOSFET |
| Datasheet | VSMT110P03DA1-Xirun.pdf |
|
|
|
The VSMT110P03DA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID VSMT110P03DA1 Pack TO-252-3L Marking VSM T110P03D XXX YYYY Qty(PCS) 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -30 ±20 -50 -23 -120 68 -29.4 310 -55 to 150 -55 to 150 62.5 24 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W Technology Innovation Future Rev.2023 Page 1 VSMT110P03DA1 -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min.
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