Datasheet Details
| Part number | VSMT150P03DA1 |
|---|---|
| Manufacturer | Xirun |
| File Size | 1.99 MB |
| Description | -30V P-Channel Enhancement Mode MOSFET |
| Datasheet | VSMT150P03DA1-Xirun.pdf |
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Overview: VSMT150P03DA1 -30V P-Channel Enhancement Mode MOSFET General.
| Part number | VSMT150P03DA1 |
|---|---|
| Manufacturer | Xirun |
| File Size | 1.99 MB |
| Description | -30V P-Channel Enhancement Mode MOSFET |
| Datasheet | VSMT150P03DA1-Xirun.pdf |
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|
The VSMT150P03DA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack VSMT150P03DA1 TO-252-3L Marking VSM T150P03D XXX YYYY Qty(PCS) 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS Parameter Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 EAS PD@TC=25℃ Single Pulse Avalanche Energy3 Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating -30 ±20 -30 -20 -68 125 29 -55 to 150 -55 to 150 62.5 3.6 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W Technology Innovation Future Rev.2023 Page 1 VSMT150P03DA1 -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min.
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