Datasheet Details
| Part number | VSMT260P04NA1 |
|---|---|
| Manufacturer | Xirun |
| File Size | 2.58 MB |
| Description | -40V P-Channel Enhancement Mode MOSFET |
| Datasheet | VSMT260P04NA1-Xirun.pdf |
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Overview: VSMT260P04NA1 -40V P-Channel Enhancement Mode MOSFET General.
| Part number | VSMT260P04NA1 |
|---|---|
| Manufacturer | Xirun |
| File Size | 2.58 MB |
| Description | -40V P-Channel Enhancement Mode MOSFET |
| Datasheet | VSMT260P04NA1-Xirun.pdf |
|
|
|
The VSMT260P04NA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack VSMT260P04NA1 PDFN3*3-8L Marking Qty(PCS) VSMT260P04N XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating -40 ±20 -20 -18 -60 37 -27.2 31.3 -55 to 150 -55 to 150 85 4 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W Technology Innovation Future Rev.2023 Page 1 VSMT260P04NA1 -40V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
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