Datasheet4U Logo Datasheet4U.com

VSMT260P04NA1 - -40V P-Channel Enhancement Mode MOSFET

Description

The VSMT260P04NA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS ID - 40V - 20A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 26 mΩ 32 mΩ.

📥 Download Datasheet

Datasheet Details

Part number VSMT260P04NA1
Manufacturer Xirun
File Size 2.58 MB
Description -40V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet VSMT260P04NA1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VSM002NE4MS-G N-Channel Advanced Power MOSFET Vanguard Semiconductor
VSM003N06HS N-Channel Advanced Power MOSFET Vanguard Semiconductor
VSM003N06HS-G N-Channel Advanced Power MOSFET Vanguard Semiconductor
VSM005NE8HS-G 85V/124A N-Channel Advanced Power MOSFET Vanguard Semiconductor
VSM007N07MS N-Channel Advanced Power MOSFET Vanguard Semiconductor

Other Datasheets by Xirun

Part Number Description
VSMT056P03VA1 -30V P-Channel Enhancement Mode MOSFET
VSMT110P03DA1 -30V P-Channel Enhancement Mode MOSFET
VSMT150P03DA1 -30V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
VSMT260P04NA1 -40V P-Channel Enhancement Mode MOSFET General Features VDS ID - 40V - 20A RDS(ON) Type RDS(ON) Type @ VGS= -10V @ VGS= -4.5V 26 mΩ 32 mΩ Description The VSMT260P04NA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Published: |