VSMT260P04NA1 datasheet by Xirun.
| Part number | VSMT260P04NA1 |
|---|---|
| Datasheet | VSMT260P04NA1-Xirun.pdf |
| File Size | 2.58 MB |
| Manufacturer | Xirun |
| Description | -40V P-Channel Enhancement Mode MOSFET |
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The VSMT260P04NA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
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