• Part: XP2301GN
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 180.80 KB
Download XP2301GN Datasheet PDF
YAGEO
XP2301GN
Description XP2301 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID -20V 130mΩ - 2.6A D Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 5V Drain Current3, VGS @ 5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor - 20 +12 -2.6 -2.1 -10 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 ℃ -55 to...