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XP2301GN - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

XP2301 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP2301GN
Manufacturer YAGEO
File Size 180.80 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2301GN Datasheet

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XP2301GN Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant S SOT-23 G Description XP2301 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G -20V 130mΩ - 2.