XP2306AGN
Description
XSemi MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and
G cost-effectiveness device.
The SOT-23 package is widely used for all mercial-industrial applications.
30V 35mΩ
5A D
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+8
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance Junction-ambient3
Value 90
Unit ℃/W
1 202312203YAGEO
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr...
