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XP2302GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

XP2302 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP2302GN
Manufacturer YAGEO
File Size 145.62 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2302GN Datasheet

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XP2302GN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Package Outline ▼ Surface Mount Package ▼ RoHS Compliant Description S SOT-23 G XP2302 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 20V 85mΩ 3.