• Part: XP2306GN
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 184.63 KB
Download XP2306GN Datasheet PDF
YAGEO
XP2306GN
Description SOT-23 G XP2306 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID 20V 35mΩ 5.3A Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +12 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol...