Datasheet Details
| Part number | XP3C011H |
|---|---|
| Manufacturer | YAGEO |
| File Size | 212.28 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP3C011H-YAGEO.pdf |
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Overview: XP3C011H Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D1/D2 ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free S1 G1 S2.
| Part number | XP3C011H |
|---|---|
| Manufacturer | YAGEO |
| File Size | 212.28 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP3C011H-YAGEO.pdf |
|
|
|
TO-252-4L XP3C011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 G1 G2 S1 30V 10mΩ 12A -30V 22mΩ -12A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 +20 +20 V 12 -12 A 9.4 -9.4 A 40 -40 A PD@TC=25℃ PD@TA=25℃ Total Power Dissipation Total Power Dissipation4 20.8 W 3.13 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Value 6 40 Unit ℃/W ℃/W 1 202312061YAGEO XP3C011H N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS=0V, ID=250uA VGS=10V, ID=11A VGS=4.5V, ID=7A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance Drain-Source Leakage Current VDS=10V, ID=7A VDS=24V, VGS=0V Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=+20V, VDS=0V ID=7A VDS=24V VGS=4.5V VD
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