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XP3C017AY - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3C017A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3C017AY
Manufacturer YAGEO
File Size 267.83 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3C017AY Datasheet

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Full PDF Text Transcription

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XP3C017AY Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free 2928-8 G2 S2 G1 S1 Description XP3C017A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 17.8mΩ 7A -30V 30mΩ -5.5A D2 The 2928-8 J-lead package provides good on-resistance G1 G2 performance and space saving like TSOP-6.
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