XP3C017AY
Description
XP3C017A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
30V 17.8mΩ
7A -30V 30mΩ -5.5A
D2
The 2928-8 J-lead package provides good on-resistance
G1
G2 performance and space saving like TSOP-6.
S1
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-30
VGS ID@TA=25℃ ID@TA=70℃ IDM
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20
+20
-5.5
-4.5
-20
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature...
