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XP3C017AYT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3C017A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme G1 efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3C017AYT
Manufacturer YAGEO
File Size 730.40 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3C017AYT Datasheet

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Full PDF Text Transcription

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XP3C017AYT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance D1 D2 N-CH ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free S1 G1 S2 G2 Description PMPAK® 3x3 P-CH XP3C017A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme G1 efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) BVDSS RDS(ON) D1 G2 S1 30V 17.8mΩ -30V 30mΩ D2 S2 Absolute Maximum Ratings@Tj=25oC.
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