XP3C011M
Description
XP3C011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
N-CH P-CH
G1
BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3
D1
G2 S1
30V 10mΩ 10.8A -30V 22mΩ -7.8A
D2
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-30
VGS ID@TA=25℃ ID@TA=70℃ IDM
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20
+20
-7.8
-6.2
-30
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to...
