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XP3C011M - N-& P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3C011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3C011M
Manufacturer YAGEO
File Size 275.37 KB
Description N-& P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3C011M Datasheet

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Full PDF Text Transcription

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XP3C011M Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 G2 S2 G1 S1 Description XP3C011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. N-CH P-CH G1 BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 G2 S1 30V 10mΩ 10.8A -30V 22mΩ -7.
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