Datasheet4U Logo Datasheet4U.com

XP6C036AM Datasheet N- & P-channel Enhancement Mode Power MOSFET

Manufacturer: YAGEO

Overview: XP6C036AM Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free.

Datasheet Details

Part number XP6C036AM
Manufacturer YAGEO
File Size 277.90 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet XP6C036AM-YAGEO.pdf

General Description

G2 S2 G1 S1 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

N-CH P-CH BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 60V 36mΩ 5.5A -60V 90mΩ -3.7A D2 The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow G1 G2 technique and suited for voltage conversion or switch applications.

XP6C036AM Distributor & Price

Compare XP6C036AM distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.