XP6C036AM
Description
G2 S2 G1 S1
XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3
D1
60V 36mΩ 5.5A -60V 90mΩ -3.7A
D2
The SO-8 package is widely preferred for all mercial- industrial surface mount applications using infrared reflow
G1
G2 technique and suited for voltage conversion or switch applications.
S1
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-60
VGS ID@TA=25℃ ID@TA=70℃ IDM
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20
+20
-3.7
-3.1
-20
PD@TA=25℃
Total Power Dissipation
Single Pulse Avalanche...
