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XP6C036AM - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP6C036AM
Manufacturer YAGEO
File Size 277.90 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6C036AM Datasheet

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Full PDF Text Transcription

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XP6C036AM Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 Description G2 S2 G1 S1 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 60V 36mΩ 5.5A -60V 90mΩ -3.7A D2 The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow G1 G2 technique and suited for voltage conversion or switch applications.
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