Datasheet4U Logo Datasheet4U.com

XP6C036MT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet Details

Part number XP6C036MT
Manufacturer YAGEO
File Size 739.97 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6C036MT Datasheet

📁 Similar Datasheet

  • XP6111 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6112 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6113 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6114 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6115 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6116 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP611FH - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6210 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
  • XP6211 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
  • XP6212 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Other Datasheets by YAGEO
  • XP6C036M - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP6C036AM - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP6C036AMT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP6C036H - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP6C058YT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K1IN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K1P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K3IT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
XP6C036MT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free N-CH P-CH Description S1 G1 S2 G2 XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 60V 36mΩ 7.1A -60V 72mΩ -5.2A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
Published: |