XP6C036MT
Description
S1 G1 S2 G2
XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3
60V 36mΩ 7.1A -60V 72mΩ -5.2A
D1 D1 D2 D2
The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
S1 G1
S2
G2 PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-60
Gate-Source Voltage
+20
+20
ID@TA=25℃ ID@TA=70℃
Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3
-5.2
-4.1
Pulsed Drain Current1
-30
PD@TA=25℃
Total Power...
