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XP6C036MT Datasheet N- & P-channel Enhancement Mode Power MOSFET

Manufacturer: YAGEO

Overview: XP6C036MT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free N-CH.

Datasheet Details

Part number XP6C036MT
Manufacturer YAGEO
File Size 739.97 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet XP6C036MT-YAGEO.pdf

General Description

S1 G1 S2 G2 XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 60V 36mΩ 7.1A -60V 72mΩ -5.2A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.

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