• Part: XP6C036MT
  • Manufacturer: YAGEO
  • Size: 739.97 KB
Download XP6C036MT Datasheet PDF
XP6C036MT datasheet preview
XP6C036MT page 2
Page 2
XP6C036MT page 3
Page 3

Related YAGEO Datasheets

Part Number Description
XP6C036M N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP6C036AM N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP6C036AMT N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP6C036H N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP6C058YT N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP6C036MT Description

S1 G1 S2 G2 XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. S1 G1 S2 G2 PMPAK® 5x6 Ratings@Tj=25oC.