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XP6C036AMT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP6C036AMT
Manufacturer YAGEO
File Size 739.90 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6C036AMT Datasheet

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Full PDF Text Transcription

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▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free XP6C036AMT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT D1 D1 D2 D2 MODE POWER MOSFET N-CH P-CH BVDSS RDS(ON) BVDSS RDS(ON) 60V 36mΩ -60V 90mΩ Description S1 G1 S2 G2 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
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