• Part: XP6C036AMT
  • Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 739.90 KB
Download XP6C036AMT Datasheet PDF
YAGEO
XP6C036AMT
Description S1 G1 S2 G2 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel Drain-Source Voltage -60 Gate-Source Voltage +20 +20 ID@TC=25℃ Drain Current, VGS @ 10V -12.4 ID@TA=25℃ ID@TA=70℃ Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 -4.6 -3.7 Pulsed Drain...