XP6C036H datasheet by YAGEO.
| Part number | XP6C036H |
|---|---|
| Datasheet | XP6C036H-YAGEO.pdf |
| File Size | 210.65 KB |
| Manufacturer | YAGEO |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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TO-252-4L XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. Units - - 1.3 V - 19 - ns - 14 - nC 2 XP6C036H P-CH @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
| Part Number | Description |
|---|---|
| XP6C036AM | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6C036AMT | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6C036M | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6C036MT | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6C058YT | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K1IN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K1P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K3IT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K3J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K5FI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
