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XP6N090G Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: YAGEO

Overview: XP6N090G Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free S SOT-89 D.

Datasheet Details

Part number XP6N090G
Manufacturer YAGEO
File Size 205.96 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet XP6N090G-YAGEO.pdf

General Description

XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

BVDSS RDS(ON) ID G 60V 90mΩ 2.7A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 V 2.7 A 2.2 A 12 A 1.25 W -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 100 Unit ℃/W 1 202311221YAGEO XP6N090G Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

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