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XP6N090N - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP6N090N
Manufacturer YAGEO
File Size 191.76 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6N090N Datasheet

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Other Datasheets by YAGEO
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Full PDF Text Transcription

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XP6N090N Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free S SOT-23S G Description XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID 60V 90mΩ 2.
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