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XP6N090Y - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP6N090Y
Manufacturer YAGEO
File Size 231.86 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6N090Y Datasheet

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Other Datasheets by YAGEO
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Full PDF Text Transcription

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XP6N090Y Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free S D D SOT-26 G D D Description XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercial-industrial applications. BVDSS RDS(ON) ID3 G 60V 90mΩ 3.
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