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XP6N090M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP6N090M
Manufacturer YAGEO
File Size 245.28 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6N090M Datasheet

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Other Datasheets by YAGEO
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Full PDF Text Transcription

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XP6N090M Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free D D D D SO-8 G SS S Description XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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