A3V28S40JTP Overview
A3V28S40JTP is organized as 4-bank x 2,097,154-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. A3V28S40JTP achieve very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in puter systems.
A3V28S40JTP Key Features
- Single 3.3V ±0.3V power supply
- Maximum clock frequency
- 60:166MHz<3-3-3>/-70:143MHz<3-3-3>/-75:133MHz<3-3-3>
- Fully synchronous operation referenced to clock rising edge
- 4-bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/FP (programmable)
- Burst type- Sequential and interleave burst (programmable)
- Byte Control- LDQM and UDQM (A3V28S40JTP)
- Random column access