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FCX688B - NPN SILICON POWER (SWITCHING) TRANSISTOR

Key Features

  • FCX688B C.
  • 2W POWER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES FCX688B C * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage Complimentary Type Partmarking Detail - FCX789A 688 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 12 12 5 10 3 1 † 2 ‡ -55 to +150 UNIT V V V A A W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.