ZXMN6A25DN8 Datasheet | Zetex Semiconductors

DESCRIPTION ; ID= 4.7A This new generation of Trench MOSFETs from Zetex utilizes a unique structure that bines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES - Low on-resistance - Fast switching speed - Low gate drive - Low profile SOIC package SO8 APPLICATIONS - DC - DC Converters - Power Management Functions - Motor control ORDERING INFORMATION DEVICE ZXMN6A25DN8TA ZXMN6A25DN8TC REEL 7’‘ 13’‘ TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING - ZXMN 6A25D Top view PROVISIONAL ISSUE B - JUNE 2003 1 SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @V GS =10V; T A =25°C @V GS =10V; T A =70°C @V GS =10V; T A =25°C Pulsed Drain Current (c) (b) (b) (d) (b) (d) (a) (d) SYMBOL V DSS V GS ID I DM IS I SM PD PD PD T j :T stg (c) LIMIT 60 Ϯ20 4.7 3.7 3.6 22 3.5 22 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A A A A A A W m W/°C W m W/°C W m W/°C °C Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25°C Linear Derating Factor Power Dissipation at T A =25°C (a) (e) Linear Derating Factor Power Dissipation at T A =25°C (b) (d) Linear Derating Factor (a) (d) Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t Յ10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300␮s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (a) (d) (a) (e) (b) (d) SYMBOL R ⍜ JA R ⍜ JA R ⍜ JA VALUE 100 70...