ZXMN6A25N8TA Datasheet | Zetex Semiconductors

Description This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features - Low on-resistance - Fast switching speed - Low gate drive - SO8 package Applications - DC-DC Converters - Power management functions - Disconnect switches - Motor control Ordering information Device ZXMN6A25N8TA Reel size (inches) Device marking ZXMN6A25 Tape width (mm) Quantity per reel SD SD SD GD Top view Issue 1 - April 2008 © Zetex Semiconductors plc 2008 .zetex. ZXMN6A25N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) @ VGS= 10V; TL=25°C (a)(d) Pulsed Drain current (c) Continuous Source current (Body diode) (b) Pulsed Source current (Body diode) (c) Power dissipation at TA =25°C (a) Linear derating factor Power dissipation at TA =25°C (b) Linear derating factor Power dissipation at TL =25°C (d) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD PD Tj, Tstg Limit 60 ±...