ZXMN6A25G Datasheet | Zetex Semiconductors

Description This new generation trench MOSFET from Zetex features a unique structure bining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features .. - - - - Low on-resistance Fast switching speed Low gate drive SOT223 package Applications - - - - DC-DC converters Power management functions Disconnect switches Motor control S D D G Pinout - top view Tape width (mm) 12 Quantity per reel 1,000 Ordering information Device ZXMN6A25GTA Reel size (inches) 7 Device marking ZXMN 6A25 Issue 2 - November 2006 © Zetex Semiconductors plc 2006 .zetex. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS = 10V; Tamb = 25°C(b) @ VGS = 10V; Tamb = 70°C(b) @ VGS = 10V; Tamb = 25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb = 25°C(a) Linear derating factor Power dissipation at Tamb = 25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 60 ±20 6.7 5.4 4.8 28.5 5.7 28.5 2 16 3.9 31 -55 to +150 Unit V V A A A A A A W m W/°C W m W/°C °C Thermal resistance Parameter Junction to ambient Junction to ambient Symbol R⍜JA R⍜JA Limit 62.5 32 Unit °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t Յ10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Issue 2 - November 2006 © Zetex Semiconductors plc 2006 .zetex. Typical characteristics Issue 2 - November 2006 © Zetex Semiconductors plc...