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ZXMN6A25G 60V SOT223 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) (⍀) 0.050 @ VGS = 10V 0.070 @ VGS = 4.5V ID (A) 6.7 5.7
Description
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.
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Features
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Low on-resistance Fast switching speed Low gate drive SOT223 package
Applications
• • • • DC-DC converters Power management functions Disconnect switches Motor control
S D D G Pinout - top view
Tape width (mm) 12 Quantity per reel 1,000
Ordering information
Device ZXMN6A25GTA Reel size (inches) 7
Device marking
ZXMN 6A25
Issue 2 - November 2006
© Zetex Semiconductors plc 2006
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