GENERAL DESCRIPTION
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 10A < 13mW < 17.5mW Top View SOIC-8 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 G1 Pin1 ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 10 8 55 22 24 2 1.3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 1.0: December 2023 Page 1 of 6 AO4832 ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Par...
Alpha & Omega Semiconductors
