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CSD15380F3 - 20-V N-Channel Power MOSFET

General Description

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

Ultralow capacitance improves switching speeds.

When used in data line applications, the low capacitance minimizes noise coupling.

Key Features

  • Ultra-low CiSS and COSS.
  • Ultra-low Qg and Qgd.
  • Ultra-small footprint.
  • 0.73 mm × 0.64 mm.
  • Ultra-low profile.
  • 0.36-mm max height.
  • Integrated ESD protection diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and halogen free.
  • RoHS compliant 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD15380F3 SLPS579B – MAY 2016 – REVISED FEBRUARY 2022 CSD15380F3 20-V N-Channel FemtoFET™ MOSFET 1 Features • Ultra-low CiSS and COSS • Ultra-low Qg and Qgd • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for load switch applications • Optimized for general purpose switching applications • Battery applications • Handheld and mobile applications 3 Description This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultralow capacitance improves switching speeds.