Datasheet Details
| Part number | CSD17307Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 381.66 KB |
| Description | N-Channel MOSFET |
| Download | CSD17307Q5A Download (PDF) |
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Overview: CSD17307Q5A www.ti.com SLPS252A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples:.
| Part number | CSD17307Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 381.66 KB |
| Description | N-Channel MOSFET |
| Download | CSD17307Q5A Download (PDF) |
|
|
|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 4 Gate Charge Gate to Drain 1 Drain to Source On Resistance Threshold Voltage VGS = 3V VGS = 4.5V VGS = 8V 1.3 12.8 9.7 8.4 V nC nC mΩ mΩ mΩ V ORDERING INFORMATION Device Package Media Qty CSD17307Q5A SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, Single Pulse ID = 33A, L = 0.1mH, RG = 25Ω VALUE 30 +10 / –8 73 14 92 3 UNIT V V A A A W –55 to 150 °C 54 mJ (1) Typical RqJA = 41°C/W on a 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
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