Datasheet4U Logo Datasheet4U.com

CSD17308Q3 - N-Channel MOSFET

Datasheet Summary

Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

Features

  • 1 Optimized for 5-V gate drive.
  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Lead-free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • VSON 3.3 mm × 3.3 mm plastic package 2.

📥 Download Datasheet

Datasheet preview – CSD17308Q3

Datasheet Details

Part number CSD17308Q3
Manufacturer Texas Instruments
File Size 520.25 KB
Description N-Channel MOSFET
Datasheet download datasheet CSD17308Q3 Datasheet
Additional preview pages of the CSD17308Q3 datasheet.
Other Datasheets by Texas Instruments

Full PDF Text Transcription

Click to expand full text
Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD17308Q3 SLPS262C – FEBRUARY 2010 – REVISED DECEMBER 2019 CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs 1 Features •1 Optimized for 5-V gate drive • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • VSON 3.3 mm × 3.3 mm plastic package 2 Applications • Notebook point of load • Point-of-load synchronous buck in networking, telecom, and computing systems 3 Description This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
Published: |