CSD17308Q3 Datasheet | Texas Instruments

Product Folder Order Now Technical Documents Tools & Software Support & munity Reference Design SLPS262C - FEBRUARY 2010 - REVISED DECEMBER 2019 CSD17308Q3 30-V N-Channel Nex FET™ Power MOSFETs 1 Features - 1 Optimized for 5-V gate drive - Ultra-low Qg and Qgd - Low thermal resistance - Avalanche rated - Lead-free terminal plating - Ro HS pliant - Halogen free - VSON 3.3 mm × 3.3 mm plastic package 2 Applications - Notebook point of load - Point-of-load synchronous buck in networking, tele, and puting systems 3 Description This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON Nex FET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. Top View S 8D S 7D S 6D D G...