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CSD17308Q3 Datasheet N-Channel MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD17308Q3 SLPS262C – FEBRUARY 2010 – REVISED DECEMBER 2019 CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs.

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General Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

Top View S 8D S 7D S 6D D G 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (4.5 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage VALUE 30 3.9 0.8 VGS = 3 V VGS = 4.5 V VGS = 8 V 1.3 12.5 9.4 8.2 UNIT V nC nC mΩ V Device Information(1) DEVICE QTY MEDIA PACKAGE CSD17308Q3 2500 13-Inch Reel SON 3.30 mm × 3.30 mm Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C unless otherwise stated VDS Drain-to-source voltage VGS Gate-to-source voltage Continuous drain current (package limited) VALUE 30 +10 / –8 50 UNIT V V ID Continuous drain current, TC = 25°C Continuous drain current(1) 44 14 IDM Pulsed drain current, TA = 25°C(2) Power dissipation(1) PD Power dissipation, TC = 25°C 167 2.7 28 TJ, Tstg Operating junction and storage temperature –55 to 150 EAS Avalanche energy, single pulse ID = 36 A, L = 0.1 mH, RG = 25 Ω 65 A A W °C mJ (1) Typical RθJA = 46°C/W when mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.

Key Features

  • 1 Optimized for 5-V gate drive.
  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Lead-free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • VSON 3.3 mm × 3.3 mm plastic package 2.

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