CSD18510KTT Datasheet | Texas Instruments

Features - 1 Ultra-Low Qg and Qgd - Low-Thermal Resistance - Avalanche Rated - Lead-Free Terminal Plating - Ro HS pliant - Halogen Free - D2PAK Plastic Package 2 Applications - Secondary Side Synchronous Rectifier - Motor Control 3 Description This 40-V, 1.4-mΩ, D2PAK (TO-263) Nex FET™ power MOSFET is designed to minimize losses in power conversion applications. . Drain (Pin 2) Gate (Pin 1) Source (Pin 3) . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 4.5 V VGS = 10 V 2.0 1.4 UNIT V n C n C mΩ DEVICE CSD18510KTT CSD18510KTTT Device Information(1) MEDIA PACKAGE 500 13-Inch Reel D2PAK Plastic Package SHIP Tape and...