Datasheet Details
| Part number | CSD18512Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 693.74 KB |
| Description | power MOSFET |
| Datasheet | CSD18512Q5B-etcTI.pdf |
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Overview: Product Folder Order Now Technical Documents Tools & Software Support & munity Reference Design CSD18512Q5B SLPS624A – DECEMBER 2016 – REVISED MARCH 2019 CSD18512Q5B 40 V N-channel NexFET™ power MOSFET.
| Part number | CSD18512Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 693.74 KB |
| Description | power MOSFET |
| Datasheet | CSD18512Q5B-etcTI.pdf |
|
|
|
This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain to source voltage VGS Gate to source voltage Continuous drain current (package limited) VALUE 40 ±20 100 UNIT V V ID Continuous drain current (silicon limited), TC = 25°C Continuous drain current(1) IDM Pulsed drain current(2) Power dissipation(1) PD Power dissipation, TC = 25°C TJ, Operating Junction, Tstg Storage Temperature EAS Avalanche energy, single pulse ID = 64 A, L = 0.1 mH, RG = 25 Ω 211 32 400 3.1 139 –55 to 150 A A W °C 205 mJ (1) Typical RθJA = 40°C/W on a 1 inch2 , 2 oz.
Cu pad on a 0.06 inch thick FR4 PCB.
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