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CSD18511Q5A Datasheet Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & munity CSD18511Q5A SLPS631 – DECEMBER 2016 CSD18511Q5A 40 V N-Channel NexFET™ Power MOSFET.

General Description

This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current (1) IDM Pulsed Drain Current (2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, Single Pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω VALUE 40 ±20 100 159 27 400 3.1 104 –55 to 150 157 UNIT V V A A A W °C mJ (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.

Cu pad on a 0.06inch thick FR4 PCB.

Key Features

  • 1 Low RDS(ON).
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

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