Datasheet4U Logo Datasheet4U.com

CSD18537NKCS - N-Channel MOSFET

General Description

This 11 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Key Features

  • 1 Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • TO-220 Plastic Package 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CSD1833 NPN SILICON EPITAXIAL POWER TRANSISTOR CDIL
CSD10060 ZERO RECOVERY RECTIFIER ETC
CSD10060A ZERO RECOVERY RECTIFIER ETC
CSD10060B ZERO RECOVERY RECTIFIER ETC
CSD10060G ZERO RECOVERY RECTIFIER ETC

Other Datasheets by Texas Instruments

Part Number Description
CSD18537NQ5A N-Channel MOSFET
CSD18531Q5A N-Channel MOSFET
CSD18532KCS 60V N-Channel MOSFET
CSD18532NQ5B N-Channel MOSFET
CSD18532Q5B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18537NKCS SLPS390A – JUNE 2013 – REVISED MARCH 2015 CSD18537NKCS 60 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package 2 Applications • High Side Synchronous Buck Converter • Motor Control 3 Description This 11 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 14 2.