• Part: CSD19536KCS
  • Description: 100V N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Texas Instruments
  • Size: 1.00 MB
Download CSD19536KCS Datasheet PDF
Texas Instruments
CSD19536KCS
Features - Ultra-low Qg and Qgd - Low thermal resistance - Avalanche rated - Pb-Free terminal plating - Ro HS pliant - Halogen free - TO-220 plastic package 2 Applications - Secondary side synchronous rectifier - Motor control 3 Description This 100V, 2.3mΩ, TO-220 Nex FET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) TC = 25°C, ID = 100A TC = 125°C, ID = 100A 0 0 2 4 6 8 10 12 14 16 18 20 - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE Drain-to-Source Voltage Qg Gate Charge Total...