• Part: CSD19536KTT
  • Description: 100V N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Texas Instruments
  • Size: 915.00 KB
Download CSD19536KTT Datasheet PDF
Texas Instruments
CSD19536KTT
Features - 1 Ultra-Low Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Lead-Free Terminal Plating - Ro HS pliant - Halogen Free - D2PAK Plastic Package 2 Applications - Secondary Side Synchronous Rectifier - Hot Swap - Motor Control 3 Description This 100-V, 2-mΩ, D2PAK (TO-263) Nex FET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 6 V VGS = 10 V 2.2 2 UNIT V n C n C mΩ DEVICE CSD19536KTT CSD19536KTTT Device Information(1) QTY MEDIA PACKAGE 500 13-Inch 50 Reel D2PAK Plastic Package SHIP Tape and...