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CSD25211W1015 Datasheet

Manufacturer: Texas Instruments
CSD25211W1015 datasheet preview

CSD25211W1015 Details

Part number CSD25211W1015
Datasheet CSD25211W1015 Datasheet PDF (Download)
File Size 1.35 MB
Manufacturer Texas Instruments
Description P-Channel Power MOSFET
CSD25211W1015 page 2 CSD25211W1015 page 3

CSD25211W1015 Overview

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Cu on 0.06-inch thick FR4 PCB. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

CSD25211W1015 Key Features

  • 1 Ultra-Low On Resistance
  • Ultra-Low Qg and Qgd
  • Small Footprint 1.0 mm × 1.5 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS pliant
  • Halogen Free

CSD25211W1015 Distributor

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