Datasheet Summary
SLPS296A
- FEBRUARY 2012
- REVISED JANUARY 2014
CSD25211W1015, P-Channel NexFET™ Power MOSFET
1 Features
- 1 Ultra-Low On Resistance
- Ultra-Low Qg and Qgd
- Small Footprint 1.0 mm × 1.5 mm
- Low Profile 0.62 mm Height
- Pb Free
- Gate-Source Voltage Clamp
- Gate ESD Protection
- 3 kV
- RoHS pliant
- Halogen Free
2 Applications
- Battery Management
- Load Switch
- Battery Protection
3 Description
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
Top View
Product Summary
TA = 25°C unless otherwise stated
Drain-to-Source Voltage
Qg
Gate Charge...