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LMG3626 Datasheet GaN FET

Manufacturer: Texas Instruments

General Description

The LMG3626 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications.

The LMG3626 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

Overview

LMG3626 SLUSFB8A – SEPTEMBER 2023 – REVISED NOVEMBER 2023 LMG3626 650-V 270-mΩ GaN FET With Integrated Driver and Current-Sense Emulation.

Key Features

  • 650-V 270-mΩ GaN power FET.
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control.
  • Current-sense emulation with high bandwidth and high accuracy.
  • Cycle-by-cycle overcurrent protection.
  • Overtemperature protection with FLT pin reporting.
  • AUX quiescent current: 240 μA.
  • AUX standby quiescent current: 50 μA.
  • Maximum supply and input logic pin voltage: 26 V.
  • 8 mm × 5.3 mm QFN package.