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NP1804MR - 18V Full-Bridge of MOSFET

General Description

The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a H-Bridge, and for a host of other applications.

Key Features

  • N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-1.8A RDS(ON)=137mΩ (typical) @ VGS=-4.5V RDS(ON)=182mΩ (typical) @ VGS=-2.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested SN SP D2 G2 N-channel P-channel Marking and pin assignment SOT-23-6L (TOP VIEW) D1 SP D2 6 5 4.

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Datasheet Details

Part number NP1804MR
Manufacturer natlinear
File Size 280.88 KB
Description 18V Full-Bridge of MOSFET
Datasheet download datasheet NP1804MR Datasheet

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18V Full-Bridge of MOSFET NP1804MR Description Schematic diagram The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a H-Bridge, and for a host of other applications. N-channel P-channel G1 D1 General Features  N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-1.8A RDS(ON)=137mΩ (typical) @ VGS=-4.5V RDS(ON)=182mΩ (typical) @ VGS=-2.