natlinear NP1804MR
The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a H-Bridge, and for a host of other applications.| Part No. | NP1804MR |
|---|---|
| Datasheet | NP1804MR Download |
| Manufacturer | natlinear |
| Description | 18V Full-Bridge of MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagram N-channel P-channel G1 D1GENERAL FEATURES
● N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-1.8A RDS(ON)=137mΩ (typical) @ VGS=-4.5V RDS(ON)=182mΩ (typical) @ VGS=-2.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested SN SP D2 G2 N-channel P-channel Marking and pin assignment SOT-23-6L (TOP VIEW) D1 SP D2 6 5 4 Application
● AC half-wave rectifier circuit NP1804 Package
● SOT-23-6L HF Pb 1 2 3 G1 SN G2 Ordering Information Part Number NP1804MR-G Storage Temperature -55°C to +150°C Package SOT-23-6L Devices Per Reel 3000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Limit Symbol Unit N P Drain-source voltage VDS 18 -20 V Gate-source voltage VGS ±12 ±12 V Drain Current-Continuous TA=25°C ID 2 -1.8 A Rev.1.0 —Nov. 8. 2017 1 (Silicon Limited) TA=75°C Pulsed Drain Cu...
