NP1804MR Description
Schematic diagram The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a H-Bridge, and for a host of other applications. N-channel P-channel G1 D1 General.
NP1804MR Key Features
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
- AC half-wave rectifier circuit
- SOT-23-6L