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BAS116-Q

Manufacturer: Nexperia
BAS116-Q datasheet preview

Datasheet Details

Part number BAS116-Q
Datasheet BAS116-Q-nexperia.pdf
File Size 194.16 KB
Manufacturer Nexperia
Description Low-leakage diode
BAS116-Q page 2 BAS116-Q page 3

BAS116-Q Overview

Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package.

BAS116-Q Key Features

  • Plastic SMD package
  • Low leakage current: typ. 3 pA
  • Switching time: typ. 0.8 us
  • Continuous reverse voltage: max. 75 V
  • Repetitive peak reverse voltage: max. 85 V
  • Repetitive peak forward current: max. 500 mA
  • Qualified according to AEC-Q101 and remended for use in automotive

BAS116-Q Applications

  • Low leakage current applications in surface mounted circuits

BAS116-AU from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Pan Jit International Logo BAS116-AU LOW LEAKAGE SWITCHING DIODES Pan Jit International
Diodes Incorporated Logo BAS116 SURFACE MOUNT LOW LEAKAGE DIODE Diodes Incorporated
Infineon Logo BAS116 Silicon Low Leakage Diode Infineon
Kexin Logo BAS116 Low-leakage diode Kexin
LITE-ON Logo BAS116 SURFACE MOUNT FAST SWITCHING DIODE LITE-ON
Nexperia logo - Manufacturer

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BAS116-Q Distributor

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