BAS116GW - Low leakage switching diode

Nexperia

General Description

Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

Key Features

High switching speed: trr = 0.8 µs.
Low leakage current: IR = 3 pA.
Repetitive peak reverse voltage VRRM ≤ 85 V.
Low capacitance: Cd = 2 pF.
Small SMD plastic package.
AEC-Q101 qualified 3.

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BAS116GW low leakage switching diode by Nexperia - Datasheet Preview

Datasheet Details

Part number	BAS116GW
Manufacturer	Nexperia
File Size	195.83 KB
Description	Low leakage switching diode
Datasheet	BAS116GW Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS116GW Low leakage switching diode 5 April 2018 Product data sheet 1. General description Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr = 0.8 µs • Low leakage current: IR = 3 pA • Repetitive peak reverse voltage VRRM ≤ 85 V • Low capacitance: Cd = 2 pF • Small SMD plastic package • AEC-Q101 qualified 3. Applications • Low-leakage current applications • General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VR reverse voltage Tj = 25 °C VF forward voltage IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.