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BAS116L-Q - Low-leakage diode

General Description

Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Switching time typical: trr = 0.8 µs.
  • Low leakage current typical: IR = 3 pA.
  • Repetitive peak reverse voltage: VRRM ≤ 85 V.
  • Low capacitance typical: Cd = 2 pF.
  • Leadless ultra small SMD plastic package.
  • Low package height of 0.48 mm.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS116L-Q Low-leakage diode 18 February 2025 Product data sheet 1. General description Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Switching time typical: trr = 0.8 µs • Low leakage current typical: IR = 3 pA • Repetitive peak reverse voltage: VRRM ≤ 85 V • Low capacitance typical: Cd = 2 pF • Leadless ultra small SMD plastic package • Low package height of 0.48 mm • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Low-leakage current applications • General-purpose switching 4. Quick reference data Table 1.