BAS116L-Q Overview
Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.
BAS116L-Q Key Features
- Switching time typical: trr = 0.8 µs
- Low leakage current typical: IR = 3 pA
- Repetitive peak reverse voltage: VRRM ≤ 85 V
- Low capacitance typical: Cd = 2 pF
- Leadless ultra small SMD plastic package
- Low package height of 0.48 mm
- Qualified according to AEC-Q101 and remended for use in automotive
