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MMBT3906-Q - 40V 200mA PNP switching transistor

General Description

PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Collector current capability IC = -200 mA.
  • Collector-emitter voltage VCEO = -40 V.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number MMBT3906-Q
Manufacturer Nexperia
File Size 215.19 KB
Description 40V 200mA PNP switching transistor
Datasheet download datasheet MMBT3906-Q Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMBT3906-Q 40 V, 200 mA PNP switching transistor 10 April 2025 Product data sheet 1. General description PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: MMBT3904-Q 2. Features and benefits • Collector current capability IC = -200 mA • Collector-emitter voltage VCEO = -40 V • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • General switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current hFE DC current gain Conditions open base VCE = -1 V; IC = -10 mA; Tamb = 25 °C Min Typ Max Unit - - -40 V - - 100 - -200 mA 300 5. Pinning information Table 2.