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PBHV3160Z Datasheet PNP Transistor

Manufacturer: Nexperia

Overview: PBHV3160Z 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 18 August 2014 Product data sheet 1.

General Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC.
  • High collector current gain hFE at high IC.
  • AEC-Q101 qualified 3.