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PBHV8515QA - NPN Transistor

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBHV9515QA.

2.

Key Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • Low package height of 0.37 mm.
  • AEC-Q101 qualified.
  • Suitable for Automatic Optical Inspection (AOI) of solder joint 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBHV9515QA. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • Low package height of 0.37 mm • AEC-Q101 qualified • Suitable for Automatic Optical Inspection (AOI) of solder joint 3.